| PART |
Description |
Maker |
| MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT
CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
| UPD4416004 UPD4416004G5-A17-9JF UPD4416004G5-A15-9 |
16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
|
NEC Corp.
NEC[NEC]
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| TC58V64DC |
16M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| TC59S1608FT-12 |
CMOS 16M-bit Synchronous DRAM
|
ETC
|
| MX29F1611 29F1611 |
16M-BIT [2M x 8/1M x 16] CMOS
From old datasheet system
|
Macronix 旺宏
|
| GM71V65403A GM71VS65403AL |
(GM71VS65403AL / GM71V65403A) 16M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
| MX29F1610A_B 29F1610A |
16M-BIT [2M x8/1M x16] CMOS
From old datasheet system
|
Macronix 旺宏
|
| GM71VS64403AL |
(GM71VS64403AL / GM71V64403A) 16M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
| MBM29DL161BE-90PBT MBM29DL161BE-70TR MBM29DL161BE- |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MX29L1611G MX29L1611GPC-10 MX29L1611GPC-12 MX29L16 |
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
|
MCNIX[Macronix International]
|
