PART |
Description |
Maker |
MX23L6413XI-90G 23L6413-10 23L6413-12 23L6413-90 M |
64M-BIT FLASH COMPATIBLE MASK ROM
|
MCNIX[Macronix International]
|
MX23L6412 MX23L6412TC-20 |
SEQUENTIAL 64M-BIT MASK ROM
|
MCNIX[Macronix International]
|
UPD23C64000JLGX-XXX UPD23C64000JLGY-XXX-MJH UPD23C |
64M-bit (8M-wordx8-bit/4M-wordx16-bit) Mask ROM
|
NEC
|
KM23C64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
23L6423A-70 23L6423A-90 |
64M-BIT PAGE MODE MASK ROM
|
Macronix International Co., Ltd.
|
MX23L6410A MX23L6410AMC-70G MX23L6410AMC-90G MX23L |
64M-BIT PAGE MODE MASK ROM
|
MCNIX[Macronix International]
|
MX23L6411TC-12 23L6411-10 23L6411-12 MX23L6411 MX2 |
64M-BIT (8M x 8 / 4M x 16) Mask ROM with Page Mode
|
MCNIX[Macronix International]
|
MX23L6422YC-12 23L6422-11 23L6422-12 MX23L6422 MX2 |
3.3 Volt 64M-BIT (4M x 16 / 2M x 32) Mask ROM with Page Mode
|
MCNIX[Macronix International]
|
K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V 512Mb/256Mb 1.8V NAND Flash Errata 64M x 8 bit NAND flash memory, 1.70 - 1.95V 32M x 16 bit NAND flash memory, 2.7 - 3.6V 32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MX29LV065XBC-90 MX29LV065XBI-90 MX29LV065TC-90 MX2 |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 120 ns, PDSO48 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd. http://
|
MX28F640C3BTTC-12 MX28F640C3BBTI-12 MX28F640C3BBTC |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|