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MW6S004NT1 - RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

MW6S004NT1_1286490.PDF Datasheet


 Full text search : RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
 Product Description search : RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET


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Toshiba Corporation
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
IRFF130 IRFF131 IRFF132 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
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General Electric Solid State
GE Solid State
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