PART |
Description |
Maker |
MVL-5C4BS |
T-1 3/4 ( f5mm) InGaN LED LAMPs 的T 1 3 / 4(f5mm)InGaN LED产品
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MVL-584BV |
T-1 3/4 ( f5mm) InGaN LED LAMPs 的T 1 3 / 4(f5mm)InGaN LED产品
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MVL-584TG |
T-1 3/4 ( f5mm) InGaN LED LAMPs
|
UOT[Unity Opto Technology]
|
ICS9248-157 ICS9248YF-157-T ICS9248YF-157LF-T AV92 |
Frequency timing generator for Pentium II system Two Chip Solution for Pentium II using ALI 1621/1632M Style Chipsets Frequency Timing Generator for Pentium II Systems 139.65 MHz, PROC SPECIFIC CLOCK GENERATOR, PDSO28 0.209 INCH, SSOP-28
|
ICST[Integrated Circuit Systems] Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
|
RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system 5.1-5.9 GHz U-NII Power Amplifier The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存??? High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??) High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五,10纳秒- 2微秒 HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp. Semtech Corporation
|
UN100 |
NPN, high power transistor. For high power audio and linear applications. Power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Vceo = 100Vdc, Vcer = 100Vdc, Vcb = 200Vdc, Veb = 7Vcd, Ic = 15Adc, PD
|
USHA India LTD
|
MJW16206 ON2059 |
POWER TRANSISTORS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE High and Very High Resolution CRT Monitors From old datasheet system
|
ON Semiconductor
|
2SD1641 |
SILICON PNP TRIPLE DIFFUSED PLANAR TYPE HIGH DC CURRNT GAIN,HIGH POWER AMPLIFIER TV POWER SOURCE OUTPUT
|
PANASONIC CORP PANASONIC[Panasonic Semiconductor]
|