| PART |
Description |
Maker |
| MT49H32M9 MT49H8M36 MT49H16M18 |
288Mb CIO Reduced Latency
|
Micron Technology, Inc.
|
| CY7C1568KV18-500BZXC CY7C1568KV18-500BZC CY7C1570K |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| LTC2421 LTC2422 LTC2421CMS LTC2422CMS LTC2422IMS L |
1-/2-Channel 20-Bit UPower No Latency ADCs in MSOP-10
2-Ch 8ppm INL, 1.2ppm Noise, No Latency Delta Sigma, MS10
8ppm INL, 1.2ppm Noise, 20-Bit No Latency Delta Sigma, MS10
1-/2-Channel 20-Bit Power No Latency DeltaSigmaADCs in MSOP-10
1-/2-Channel 20-Bit µPower No Latency DeltaSigma™ ADCs in MSOP-10
|
LINER[Linear Technology]
|
| GS82582DT19AGE-400 GS82582DT19AGE-375 GS82582DT19A |
288Mb SigmaQuad-II TM Burst of 4 SRAM
|
GSI Technology
|
| LTC2420I LTC2420IS8 LTC2420 LTC2420CS8 2420I LTC24 |
20-Bit uPower No Latency ADC in SO-8
24bit uPower No Latency ADC
From old datasheet system
|
LINER[Linear Technology]
|
| LTC2410 LTC2410CGN 2410I LTC2410C LTC2410I LTC2410 |
From old datasheet system
24-Bit No Latency ADC with Differential Input and Differential Reference
24 Bit No Latency ADC
|
Linear Technology
|
| IS61DDB22M18-250M3 IS61DDB22M18 IS61DDB21M36-250M3 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc
|
| K7I643682M07 K7I641882M |
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg，快速开关WFET ® ，VDS=30V; VGS=±20V
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| IS61DDB41M18A |
1Mx18, 512Kx36 18Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
