PART |
Description |
Maker |
SI6821DQ |
P-Ch, Reduced Qg, Fast Switching MOSFET Schottky Diode From old datasheet system P-Channel Reduced Qg / MOSFET with Schottky Diode P-Channel, Reduced Qg, MOSFET with Schottky Diode P沟道,减Qg和与MOSFET的肖特基二极
|
Vishay Siliconix Vishay Intertechnology, Inc.
|
SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道,低Qg,快速开WFET,超低开关损 N-Channel Reduced Qg, Fast Switching WFET N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
SI4392DY SI4392DY06 |
N-Channel Reduced Qg, Fast Switching WFET? N-Channel Reduced Qg, Fast Switching WFET庐 N-Channel Reduced Qg, Fast Switching WFET㈢
|
Vishay Siliconix
|
IS49NLS18160 |
288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
K4C89083AF K4C89093AF |
288Mb x18 Network-DRAM2 Specification
|
Samsung semiconductor
|
IS49NLC18160 IS49NLC36800 IS49NLC93200 |
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
GS81332QT19CE-250M GS81332QT19CE-350M GS81332QT37C |
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II 1.8 Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II TM
|
GSI Technology
|
K7J163682B K7J161882B |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
CY7C1393AV18-167BZC |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor Corp.
|
CY7C1522KV18 |
72-Mbit DDR II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|