| PART |
Description |
Maker |
| M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM
4-BANK x 2097152-WORD x 8-BIT
4-BANK x 1048576-WORD x 16-BIT
4-BANK x 4194304-WORD x 4-BIT
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HM51W17805B HM51W17805BJ-8 HM51W17805BLJ-8 HM51W17 |
Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-3355-0 71; Contact Mating Area Plating: Tin
2097152-word*8-bit Dynamic random access memory
|
Hitachi,Ltd.
|
| M5M5V208AKR M5M5V208AKV D99016 M5M5V208AKR-55LW |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M4416P M5M4416P-12 M5M4416P-15 |
65536 Bit (16384 Word by 4 Bit) Dynamic Ram
65,536-BIT (16,384-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M27C202JK-12I M5M27C202JK-15I M5M27C202K-12I M5M |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152位（131072字由16位）的CMOS电可擦除只读光盘可重复编
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V216AWG M5M5V216AWG-70LW M5M5V216AWG-55H M5M5V |
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM 2097152位（131072字由16位）的CMOS静态RAM
From old datasheet system
|
http://
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MC-454AC726 |
4M-Word By 72-BIT Dynamic RAM Module(4M×72位动态RAM模块) 分词72位动态内存模块（4米72位动态内存模块）
4M-Word By 72-BIT Dynamic RAM Module(4M?72浣????AM妯″?)
|
NEC Corp.
NEC, Corp.
|
| MK32VT1632-10YC |
16777216 Word x 32 Bit Synchronous Dynamic RAM Module (2 BANK)(16M字2位同步动态RAM模块)
From old datasheet system
16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM56V16800D MSM56V16800DH |
2-Bank?1,048,576-Word?8-Bit Synchronous Dynamic RAM(2缁??,048,576瀛??浣??姝ュ???AM)
2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2组,048,576字位同步动态RAM)
2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM
262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
GoldStar
LG[LG Semicon Co.,Ltd.]
|
