| PART |
Description |
Maker |
| M5M28F101AFP |
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M51008KR-70XI M5M51008KR-55XI M5M51008KR-70HI M5 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| M5M51008CFP-70HI |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
MITSUBISHI
|
| M5M51008KR-10LL-I M5M51008KR-70LL M5M51008KR-55LL |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
From old datasheet system
|
Mitsubishi
|
| TC55BS8128J-12 TC55BS8128J-10 |
131072 WORD X 8 BIT SYNCHRONOUS STATIC RAM
|
Toshiba Semiconductor
|
| HN28F101 HN28F101CP-12 HN28F101CP-15 HN28F101CP-20 |
131072-word ?? 8-bit CMOS Flash Memory
|
ETC
|
| M5M4V4S40CTP-12 M5M4V4S40CTP-15 4MX16SDRAMTP |
4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HN27C101AFP HN27C101AFP-12 |
N/A
131072-word x 8-bit CMOS One Time Electrically Programmable ROM
|
Hitachi Semiconductor
|
| TC55V1001F TC55V1001F-10 TC55V1001F-85 TC55V1001FT |
131,072 WORD BY 8 BIT STATIC RAM 131072 Word8位静态RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HM514100DLS-6 HM514100DLS-7 HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 60ns
4,194,304-word x 1-bit dynamic RAM, 70ns
4,194,304-word x 1-bit dynamic RAM, 80ns
|
Hitachi Semiconductor
|
