| PART |
Description |
Maker |
| TAN350 |
high power COMMON BASE bipolar transistor.
|
ADPOW[Advanced Power Technology]
|
| DME500 |
500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz high power COMMON BASE bipolar transistor.
|
GHz Technology
|
| 0912-7 0912-7-3 0912-7-2 |
From old datasheet system
Intemally Matched, Common Base Transistor
7 W, 50 V internally matched, common base transistor
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Acrian
|
| 2SC4527 E000955 |
TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON BASE)
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR, COVBERTER APPLICATIONS)(COMMON BASE)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| EMC4DXV5T1G EMC3DXV5T1G EMC3DXV5T5G EMC2DXV5T1G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
| BF414 Q62702-F517 |
From old datasheet system
NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages)
NPN Silicon RF Transistor (For low-noise/ common base VHF and FM stages)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SAA1064TD-T SAA1064TD SAA1064PN SAA1064N |
LED DISPLAY DRIVER,7-SEGMENT,COMMON-ANODE,BIPOLAR,SOP,24PIN,PLASTIC
LED DISPLAY DRIVER,7-SEGMENT,COMMON-ANODE,BIPOLAR,DIP,24PIN,PLASTIC
From old datasheet system
|
Philips Semiconductors
|
| 1415-2 |
2 W, 20 V, 1430-1540 MHz common base transistor
|
GHz Technology
|
| EPE6030 |
10 Base-T Module with Enhanced Common Mode Attenuation
|
PCA ELECTRONICS INC.
|
| BUL62B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
