PART |
Description |
Maker |
MRF275G |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER F
|
MOTOROLA
|
UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system MOS Field Effect Transistor P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC] NEC Corp.
|
MRF174 |
N-CHANNEL MOS BROADBAND RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
MRF174 |
N-CHANNEL MOS BROADBAND RF POWER FET
|
MACOM[Tyco Electronics]
|
MRF374D |
MRF374 470-860 MHz, 100 W, 28 V Lateral N-Channel Broadband RF Power MOSFET
|
Motorola
|
2SK2906-01 |
N-channel MOS-FET N-channel MOS-FET 100 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
FUJI[Fuji Electric] Fuji Electric Holdings Co., Ltd.
|
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
NMA5107-A1M |
High Power Broadband Noise Sources 100 Hz to 100 MHz
|
Micronetics, Inc.
|
APT6010JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 47A 0.100 Ohm
|
Advanced Power Technology
|
2SJ0536 |
Silicon P-Channel MOS FET Silicon P-Channel MOS FET 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor] PANASONIC CORP
|
HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8 Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|
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