| PART |
Description |
Maker |
| AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-320 |
Low Current/ High Performance NPN Silicon Bipolar Transistor
Low Current, High Performance NPN Silicon Bipolar Transistor
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| MP4T64533 |
Silicon Bipolar High fT Low Noise Microwave Transistors 硅双极高fT的微波低噪声晶体
|
M-Pulse Microwave, Inc.
|
| BFR183 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
|
| BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| INA-02184 INA-02184-BLK INA-02184-TR1 INA-02186 IN |
GT 10C 10#16 PIN PLUG 低噪声，可级联硅双极MMIC放大
GT 10C 10#16 SKT PLUG
Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise Cascadable Silicon Bipolar MMIC Amplifier
|
http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| BFP193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| AT-32032 AT-32032-TR2 |
TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 40MA I(C) | SOT-323
Microcurrent transistors for battery operations
Low Current, High Performance NPN Silicon Bipolar Transistor(小电流，高性能NPN硅双极型晶体
|
Agilent(Hewlett-Packard)
|
| UPC2714T-E3 UPC2715T UPC2714T |
1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 1.8 GHz的低功耗宽带放大器硅双极单片集成电
LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| AT-41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| BFP760 BFP760-15 |
Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
