| PART |
Description |
Maker |
| MMG3010NT1 MMG3010NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3007NT1 MMG3007NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3008NT1 MMG3008NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3008NT1 |
Heterojunction Bipolar Transistor(InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MMG3009NT1 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MT3S111P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
| MMG3005NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
| MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
| MMG3003NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
|
FREESCALE[Freescale Semiconductor, Inc]
|
| BFP740F |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
|
Infineon
|