| PART |
Description |
Maker |
| NX8300CE-CC NX8300BE-CC NX8300BE |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 2.5 Gb/s APPLICATION
|
CEL[California Eastern Labs]
http://
|
| NX6511GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX8563LB429 NX8563LB429-BA NX8563LB429-CA NX8563LB |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS 连续光源InGaAsP的应变量子阱激光器激光二极管模块D -波分复用应用
CONVERTER DC-DC 1W 5V/14V DUAL 连续光源InGaAsP的应变量子阱激光器激光二极管模块的D -波分复用应用
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS 连续光源InGaAsP的应变量子阱激光器激光二极管模块的D -波分复用应用
ER 8C 8#12 SKT RECP LINE
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| ML99237 ML9XX37 ML9SM37 |
High Power InGaAsP DFB LASER DIODE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NX6301SH NX6301SI NX6301SJ NX6301SK NX6301GK NX630 |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications.
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
NEC
CEL[California Eastern Labs]
|
| NX6414EH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION
|
California Eastern Labs
Renesas Electronics Corporation
|
| NX8563LF311-BA NX8563LB533-BA NX8563LF334-BA NX856 |
CONVERTER DC-DC 6W 48V/12V SGL
NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS (10 mW MIN) 邻舍连续InGaAsP多量子阱激光器激光二极管模块的DWDM应用10毫瓦最小）
NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS (10 mW MIN) 邻舍连续InGaAsP多量子阱激光器激光二极管模块的DWDM应用0毫瓦最小）
CONVERTER DC-DC 6W 12V/5V SGL 邻舍连续InGaAsP多量子阱激光器激光二极管模块的DWDM应用0毫瓦最小）
CONVERTER DC-DC 6W 12V/15V SGL 邻舍连续InGaAsP多量子阱激光器激光二极管模块的DWDM应用0毫瓦最小）
DIODE ZENER SINGLE 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOD-323 3K/REEL
TVS BI-DIR 24V 1500W DO-201
|
California Eastern Labs
http://
California Eastern Laboratories, Inc.
|
| NX6309GH NX6309GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6301 NX6301GK NX6301SI NX6301SH |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories
|
| NX8563LF358-BA NX8563LF318-BA NX8563LB413-BA NX856 |
NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS (10 mW MIN)
|
CEL[California Eastern Labs]
|
