| PART |
Description |
Maker |
| NX6508GK51 NX6508GH47 NX6508GH51 NX6508GH59 NX6508 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ).
|
NEC
|
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX63067H NX63067K NX6307GH NX6307GK NX6307 |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX8315XC |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
Renesas Electronics Corporation
|
| NX6508 |
NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
|
California Eastern Laboratories
|
| NX6309GH NX6309GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6306 NX6306GK NX6306GH |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
|
California Eastern Laboratories
|
| NX8563LF358-BA NX8563LF318-BA NX8563LB413-BA NX856 |
NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS (10 mW MIN)
|
CEL[California Eastern Labs]
|
| NX6406GK-AZ NX6406 NX6406GH-AZ |
NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX8504CE-CC NX8504BE-CC |
NECs 1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION
|
CEL[California Eastern Labs]
|
