| PART |
Description |
Maker |
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| MHL21336NN |
3G Band RF Linear LDMOS Amplifier
|
Freescale Semiconductor, Inc
|
| MHL21336 |
3G BAND RF LINEAR LDMOS AMPLIFIER
|
Motorola, Inc
|
| MHL19926 |
PCS Band RF Linear LDMOS Amplifier
|
MOTOROLA[Motorola, Inc]
|
| MAX2267 MAX2267EUE MAX2268EUE MAX2269EUE MAX2268 M |
2.7V / Single-Supply / Cellular-Band Linear Power Amplifiers
2.7V, Single-Supply, Cellular-Band Linear Power Amplifiers 887 MHz - 925 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2.7V, Single-Supply, Cellular-Band Linear Power Amplifiers 2.7V、单电源、蜂窝频段线性功率放大器
|
MAXIM - Dallas Semiconductor
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier 2900 MHz - 3300 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLS6G3135-12008 BLS6G3135-120-15 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors
|
| BLS7G2933S-150 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
