| PART |
Description |
Maker |
| MH32V725BST-5 |
HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM 超页模式2415919104 -位（33554432 - Word2 -位）动态随机存储器
|
Mitsubishi Electric, Corp.
|
| MH32S72QJA-8 MH32S72QJA-7 |
2415919104-BIT ( 33554432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32V725BST-6 MH32V725BST-5 |
HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S64APFB-8 MH32S64APFB-7 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M41000002M M41000002R M41000002W AM41DL3228GB30IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| W25X40A W25X40AVZPIG W25X20A |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| AD7470 HSC-INTERFACEBOARD EVAL-CONTROLBOARD AD7472 |
AD7470/AD7472: 1.75MSPS. 4mW 10-Bit/12-Bit SAR ADC Data Sheet (Rev. A. 3/00)
2.7 V to 5.25 V, Micropower, 8-Channel, 125 kSPS, 12-Bit ADC in 16-Lead TSSOP
12-Bit, 2.7 V to 5.25 V, 1.5 MSPS Low Power ADC
10-Bit, 2.7 V to 5.25 V, 1.75 MSPS Low Power ADC
1.75 MSPS, 4 mW 10-Bit/12-Bit Parallel ADCs
1.75MSPS, 4mW 10-Bit/12-Bit SAR ADC
|
Analog Devices, Inc.
AD[Analog Devices]
|
| AM41LV3204M M410000095 M410000096 AM41LV3204MT10IT |
Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
|
SPANSION[SPANSION]
AMD[Advanced Micro Devices]
|
