| PART |
Description |
Maker |
| MH32S64PFJ-7L MH32S64PFJ-6 MH32S64PFJ-6L MH32S64PF |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32V725BST-6 MH32V725BST-5 |
HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IS24C08-2 IS24C08-2G IS24C08-2GI IS24C08-2P IS24C0 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit2-WIRESERIALCMOSEEPROM
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
|
ETC[ETC]
|
| 24C016 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
|
Integrated Silicon Solution Inc
|
| W25X40A W25X40AVZPIG W25X20A |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| AM45DL6408G |
64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) (Preliminary)
From old datasheet system
|
AMD Inc
|
| AM45DL3208GNBSP AM45DL3208G |
32 Mbit (4 M x 8-Bit/2 M x 16-Bit) CMOS and 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) (Preliminary)
From old datasheet system
|
AMD Inc
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| MR53V3252J |
2,097,152-Word X 16-Bit or 4,194,304-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM
From old datasheet system
|
OKI
|
| MR53V8052J |
524,288-Word X 16-Bit or 1,048,576-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM
From old datasheet system
|
OKI
|
