| PART |
Description |
Maker |
| MGFC42V3436 |
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SY58034U0708 |
6GHz, 1:6 CML FANOUT BUFFER WITH 2:1 MUX INPUT AND INTERNAL I/O TERMINATION
|
Micrel Semiconductor
|
| SY58036UMITR SY58036UMG SY58036UMGTR SY58036UMI SY |
6GHz, 1:6 400mV LVPECL FANOUT BUFFER WITH 2:1 MUX INPUT AND INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
| MGFC42V4450 |
4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V4450A |
4.4-5.0 GHz Band 16W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC42V7785A |
7.7-8.5GHz Band 16W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| LX5506B LX5506BLQ |
InGaP HBT 4 6GHz Power Amplifier
From old datasheet system
InGaP HBT 4 6GHz Power Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| A623308AV-70SF A623308AV-70SIF A7623L-S08-T A62330 |
2×75?/a> DRIVER IC WITH 3 INTERNAL CIRCUITS
2×75 DRIVER IC WITH 3 INTERNAL CIRCUITS
2】75з DRIVER IC WITH 3 INTERNAL CIRCUITS
25з DRIVER IC WITH 3 INTERNAL CIRCUITS
8K X 8 BIT CMOS SRAM 8K的8位CMOS的SRAM
|
UTC[Unisonic Technologies]
AMICC[AMIC Technology]
友顺科技股份有限公司
AMIC Technology Corporation
AMIC Technology, Corp.
|
| LX5506E-LQ LX5506E LX5506ELQ |
Wireless LAN Power Amplifier
InGaP HBT 4 ?6GHz Power Amplifier
InGaP HBT 4 - 6GHz Power Amplifier
InGaP HBT 4 6GHz Power Amplifier
|
MICROSEMI[Microsemi Corporation]
|
