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MGFC41V3642 - 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET

MGFC41V3642_1278729.PDF Datasheet


 Full text search : 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
 Product Description search : 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET


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MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
MITSUBISHI[Mitsubishi Electric Semiconductor]
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Mitsubishi Electric Corporation
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MICREL[Micrel Semiconductor]
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
BFR92W Q62702-F1488 NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) NPN硅射频晶体管(对于宽带放大器高达2GHz和快速的非饱和由0.5毫安0毫安的集电极电流开关)
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From old datasheet system
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
BFP93 BFP93A Q62702-F1144 NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-253
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
 
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