| PART |
Description |
Maker |
| MGFK41A4045 |
14.0-14.5 GHz BAND / 12W
|
Mitsubishi Electric Semiconductor
|
| SY89872UMI SY89872UMITR SY89872UMG SY89872UMGTR SY |
2.5V, 2GHz ANY DIFF. IN-TO-LVDS PROGRAMMABLE CLOCK DIVIDER/FANOUT BUFFER WITH INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
| SY89856UMG SY89856UMGTR SY89856U |
2GHz, Low-Power, 1:6 LVPECL Fanout Buffer with 2:1 Input MUX and Internal Termination
|
MICREL[Micrel Semiconductor]
|
| MGFC36V6472A04 MGFC36V6472A |
6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V3742_04 MGFC40V3742 MGFC40V374204 |
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC42V6472A |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V6472A C406472A |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
From old datasheet system
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC38V6472 |
RECTIFIER BRIDGE 10A 400V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX
6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BFR92W Q62702-F1488 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) NPN硅射频晶体管（对于宽带放大器高达2GHz和快速的非饱和由0.5毫安0毫安的集电极电流开关）
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
