| PART |
Description |
Maker |
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| SY58011UMG SY58011UMITR SY58011UMI SY58011U SY5801 |
7GHZ, 1:2 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION
|
MICREL[Micrel Semiconductor]
|
| MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFX39V0717 |
10.7-11.7GHz Band 8W Internally MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFS45V2527A |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V7177A |
7.1 - 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段8瓦特内部匹配砷化镓场效应
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| MGFC36V7177A C367177A |
From old datasheet system
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC40V5964_04 MGFC40V5964 MGFC40V596404 |
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V4450A C404450A |
From old datasheet system
4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
