| PART |
Description |
Maker |
| MGFC40V5964_04 MGFC40V5964 MGFC40V596404 |
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2450BM14G0011 2450BM14G0011S 2450BM14G0011T |
2.4GHz Impedance Matched Balun embedded FCC/ETSI Band Pass Filter For Texas Instruments CC2620, CC2630, CC2640, CC2650 chipsets operated on INTERNAL BIAS MODE
|
Johanson Technology Inc...
|
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SC1532 SC1532CS |
RES 6.19K OHM 1/10W .1% 0603 SMD
400mA SmartLDOTM with Internal Pass MOSFET
|
SEMTECH[Semtech Corporation]
|
| MGFC36V5964A_04 MGFC36V5964A MGFC36V5964A04 |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TQP2420B |
2.4GHz ISM Band InGaP HBT Power Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V6472A |
6.4-7.2 GHz BAND 10W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B C407785B |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
