PART |
Description |
Maker |
1N2981D 1N2987C 1N2973D 1N2987D 1N2989C 1N2980D 1N |
Diode Zener Single 17V 5% 10W 2-Pin DO-4 Diode Zener Single 25V 5% 10W 2-Pin DO-4 Diode Zener Single 9.1V 5% 10W 2-Pin DO-4 Diode Zener Single 30V 5% 10W 2-Pin DO-4 Diode Zener Single 16V 5% 10W 2-Pin DO-4 Diode Zener Single 7.5V 5% 10W 2-Pin DO-4 Diode Zener Single 24V 5% 10W 2-Pin DO-4 Diode Zener Single 175V 20% 10W 2-Pin DO-4 Diode Zener Single 50V 5% 10W 2-Pin DO-4 Diode Zener Single 43V 5% 10W 2-Pin DO-4 Diode Zener Single 56V 5% 10W 2-Pin DO-4 Diode Zener Single 13V 5% 10W 2-Pin DO-4 Diode Zener Single 8.2V 5% 10W 2-Pin DO-4 Diode Zener Single 15V 5% 10W 2-Pin DO-4 Diode Zener Single 27V 5% 10W 2-Pin DO-4 Diode Zener Single 18V 5% 10W 2-Pin DO-4 Diode Zener Single 105V 5% 10W 2-Pin DO-4 Diode Zener Single 52V 5% 10W 2-Pin DO-4 Diode Zener Single 47V 10% 10W 2-Pin DO-4 Diode Zener Single 36V 10% 10W 2-Pin DO-4 Diode Zener Single 36V 5% 10W 2-Pin DO-4 Diode Zener Single 51V 5% 10W 2-Pin DO-4 Diode Zener Single 47V 5% 10W 2-Pin DO-4
|
New Jersey Semiconductor
|
CH115-XX |
OUTLINE, 4-8GHz DIRECTIONAL COUPLER, TYPE-N, OCTAVE BAND
|
Advanced Technical Materials Inc.
|
MGFK38V2228 K382228 |
From old datasheet system 12.2-12.8GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V5964A C405964A |
5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V3742_04 MGFC40V3742 MGFC40V374204 |
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MSM855B MSM855B2 MSM855 |
Intel垄莽 Pentium垄莽 M CPU 0.6 / 1.0 / 1.4 / 1.8GHz Intel? Pentium? M CPU 0.6 / 1.0 / 1.4 / 1.8GHz
|
Advanced Digital Logic, Inc.
|
SA5204AD SA5204AN NE5204 NE5204A NE5204AD NE5204AN |
RES 110 OHM 1/10W .5% 0805 SMD 0 MHz - 350 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER Wide-band high-frequency amplifier
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
RF5117PCBA-41X RF511706 RF5117 |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
MGFC42V5258 |
5.2-5.8 GHz Band 16W Internally Matched GaAs FET 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|