| PART |
Description |
Maker |
| MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V3742_04 MGFC40V3742 MGFC40V374204 |
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK38V2732 K382732 |
From old datasheet system
12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET
12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SY89833L SY89833LMITR SY89833LMI |
3.3V / 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
3.3V, 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
3.3V 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
| CXA1787N |
2GHz-band PLL IC for Mobile Communications
|
SONY
|
| TDA7497 |
10W 10W 10W/15W TRIPLE AMPLIFIER
10 10W STEREO AMPLIFIER WITH MUTE/ST-BY
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MGFC42V374204 MGFC42V3742 |
3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC41V3642_04 MGFC41V3642 |
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V3642A C453642A |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET 3.6 - 4.2GHz波段32W内部匹配砷化镓场效应
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
