| PART |
Description |
Maker |
| MGFC39V5964A_04 MGFC39V5964A MGFC39V5964A04 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V5964A_04 MGFC36V5964A MGFC36V5964A04 |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V5964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| RF5745PCK-410 |
2.4GHz TO 2.5GHz, 802.11b/g/n SINGLE-BAND FRONT END MODULE
|
RF Micro Devices
|
| MGFC42V5964A C425964A |
5.9~6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
From old datasheet system
|
Mitsubishi
|
| 2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz)
|
TOSHIBA
|
| MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MAX2242 MAX2242EBC-T MAX2242EBC |
2.4GHz to 2.5GHz Linear Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| R414730000 |
ATTENUATOR, N 2W 30DB 12.4GHZATTENUATOR, N 2W 30DB 12.4GHZ; Impedance:50R; Attenuation:30dB; Connector type:N; Frequency, operating max:12.4GHz; Power rating:2W 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Radiall S.A.
|
| SKY77916-11 |
Tx-Rx FEM for Quad-Band GSM /GPRS / EDGE w/ 14 Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
|
Skyworks Solutions Inc.
|
| CHV2242A CHV2242A-99F_00 CHV2242A-99F/00 |
Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
UMS[United Monolithic Semiconductors]
|
| WPANTDP028 |
This single band dipole antenna is an ideal solution for single band WLAN access points operating in the ISM 2.45GHz band
|
World Produts Inc.
|
