| PART |
Description |
Maker |
| MS2473 |
high power COMMON BASE bipolar transistor.
|
MICROSEMI[Microsemi Corporation]
|
| TPR175 |
high power COMMON BASE bipolar transistor.
|
GHZTECH[GHz Technology]
|
| JTDB25 |
RF Power Transistors: AVIONICS
25 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz 25瓦，36伏特，脉冲航空电子设960 - 1215兆赫
High power COMMON BASE bipolar transistor.
|
Advanced Power Technology
Electronic Theatre Controls, Inc.
GHz Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base)
|
TOSHIBA
|
| 2SC4527 E000955 |
TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON BASE)
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR, COVBERTER APPLICATIONS)(COMMON BASE)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| PTB20166 |
23 Watts, 675-925 MHz Common Base RF Power Transistor
|
ERICSSON[Ericsson]
|
| ITC1100 |
1000 WATT, 50V, Pulsed Avionics 1030 MHz
Common base bipolar transistor 1000 WATT, 50V, Pulsed
|
List of Unclassifed Manufacturers
ETC
GHz Technology
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
| BUL54ASMD |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL54 BUL54A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL74A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
|
| BUL62B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
