| PART |
Description |
Maker |
| MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块 High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE Thyristor and Rectifiers Modules
|
IXYS, Corp. IXYS Corporation
|
| MDD250-16N1 MDD250 MDD250-08N1 MDD250-12N1 MDD250- |
High Power Diode Modules 290 A, 1200 V, SILICON, RECTIFIER DIODE Thyristor and Rectifiers Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
| MDD312-12N1 L102 MDD312-18N1 MDD312-14N1 MDD312-16 |
Thyristor and Rectifiers Modules High Power Diode Modules CAT6A PLENUM, GREEN, SPOOBULK CABLE
|
IXYS Corporation
|
| RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XX |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching) MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MA8334 |
High Power Multi-Throw PIN Diode Switch Modules
|
M/A-COM Technology Solutions, Inc.
|
| RM30CZ-24 RM30DZ-24 RM30CZ-2H RM30DZ-2H |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM100CZ-24 RM100DZ-24 RM100CZ-2H RM100DZ-2H |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| VUO85-16NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
| VBE17-12NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| RM10TN-H RM10 |
From old datasheet system Three-Phase Diode Bridge Modules Rectifier Diode Modules for ASIPM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|