| PART |
Description |
Maker |
| APT6017B2LL APT6017LLL |
POWER MOS 7 600V 35A 0.170 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| 05963-1 05963 |
BRIDGE RECTIFIER 600V 35A
BRIDGE RECTIFIER, 600V, 35A
|
VICOR[Vicor Corporation]
|
| R6035KNZC8 |
Nch 600V 35A Power MOSFET
|
ROHM
|
| K3296 2SK3296 2SK3296-ZK 2SK3296-ZJ 2SK3296-S |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,35A I(D),TO-220AB
MOS FIELD EFFECT TRANSISTOR
Power MOS FET
|
NEC Corp.
NEC[NEC]
|
| FGW35N60HD |
Discrete IGBT (High-Speed V series) 600V / 35A
|
Fuji Electric
|
| STGW35NB60SD GW35NB60SD |
N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRGPC50MD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(VCES=600V, @VGE=15V, IC=35A)
|
IRF
International Rectifier
|
| PSB2196-NV1.4 PSB2196-HV1.4 |
ISAC-P TE (Subscriber Access Controll...
|
Infineon
|
| FCH35N60 |
N-Channel SuperFETMOSFET 600V, 35A, 98m
N-Channel SuperFET? MOSFET
|
Fairchild Semiconductor
|
| RJJ0315DPA-15 |
-30V, -35A, 5.9mΩmax. P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0234DNS |
25V, 35A, 5.8mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
