| PART |
Description |
Maker |
| OST4ML8132A |
8mm Round Intelllliigent Controll RGB LED
|
OptoSupply International
OptoSupply Internationa...
|
| RJK0655DPB RJK0655DPB-00-J5 RJK0655DPB-15 |
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| MD3500-14 |
35A MOTOROLA TYPE PRESS-FIT DIODE
|
Won-Top Electronics
|
| BD3500-14 |
35A BOSCH TYPE PRESS-FIT DIODE
|
Won-Top Electronics
|
| BD3501 BD3500 BD3502 BD3503 BD3504 BD3505 BD3506 |
35A BOSCH TYPE PRESS-FIT DIODE 35A条博世型压接二极
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| BD3524 BD3520 |
35A AVALANCHE BOSCH TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
| RJK0451DPB-00-J5 RJK0451DPB13 |
40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0856DPB-15 |
80V, 35A, 8.9m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| TPCS8201 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
|
TOSHIBA[Toshiba Semiconductor]
|
| APT6015JN APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| RJK0234DNS |
25V, 35A, 5.8mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
