PART |
Description |
Maker |
GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM 12ns 100MHz 32K x 32 1Mb synchronous burst SRAM 10ns 133MHz 32K x 32 1Mb synchronous burst SRAM 9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM 11ns 117MHz 32K x 32 1Mb synchronous burst SRAM 9ns 150MHz 32K x 32 1Mb synchronous burst SRAM 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
M27W800-150K6TR M27W800 M27W800-100B6TR M27W800-10 |
8 Mbit (1Mb x 8 or 512Kb x 16), Low Voltage UV EPROM and OTP EPROM 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM 8兆8512KB × 16低压紫外线存储器和OTP存储 81兆812KB × 16低压紫外线存储器和OTP存储 8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROM 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
MPC2105C MPC2106CDG66 |
(MPC2105C / MPC2106C) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE SRAM MODULE, 9 ns, PDMA178
|
Motorola, Inc. Motorola Mobility Holdings, Inc.
|
M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M29W800DB |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY 8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics STMicroelectronics
|
M29W800B |
8Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(8Mb低压闪速存储器)
|
意法半导
|
M29W800DB M29W800DT M29W800DB70M1T M29W800DB70M6T |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory Low-Power Configurable Multiple-Function Gate 6-SOT-23 -40 to 85 8兆(1兆x812KB的x16插槽,引导块V电源快闪记忆 Low-Power Configurable Multiple-Function Gate 6-DSBGA -40 to 85 8兆(1兆x812KB的x16插槽,引导块V电源快闪记忆 8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory
|
STMicroelectronics N.V. ST Microelectronics
|
M27C800 M27C800-120F1TR M27C800-120F6TR 27C800 M27 |
512K X 16 OTPROM, 120 ns, PDSO44 512K X 16 OTPROM, 50 ns, PQCC44 Octal Bus Transceiver With 3-State Outputs 20-TSSOP -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储 Octal Bus Transceiver With 3-State Outputs 20-TVSOP -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM 8兆x812KB的x16紫外线存储器和OTP存储 Octal Bus Transceiver With 3-State Outputs 20-SOIC -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储 16-Bit Bus Transceiver and Transparent D-Type Latch with 8 Independent Buffers 96-LFBGA -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储 32-Bit Buffer/Driver With 3-State Outputs 96-LFBGA -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储 Octal Buffer/Driver With 3-State Outputs 20-SOIC -40 to 85 Octal Buffer/Driver With 3-State Outputs 20-TSSOP -40 to 85 8 MBIT (1MB X8 OR 512KB X16) UV EPROM AND OTP EPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
GS84032T-166 GS84032T-166I GS84032B-166I GS84032B- |
x32 Fast Synchronous SRAM x36 Fast Synchronous SRAM 256K x 18 128K x 32 128K x 36 4Mb Sync Burst x18 Fast Synchronous SRAM x18快速同步SRAM
|
Coilcraft, Inc.
|
UPD4382361GF-A85 UPD4382321GF-A85 UPD4382361GF-A90 |
x32 Fast Synchronous SRAM x36 Fast Synchronous SRAM x36快速同步SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
|
Samsung Semiconductor Co., Ltd.
|
CXK77K36R320GB CXK77K36R320GB-3 CXK77K36R320GB-33 |
32Mb LW R-R HSTL High Speed Synchronous SRAM (1Mb x 36)
|
Sony Corporation
|
IS61SF25616 IS61SF25616-10B IS61SF25616-10TQI IS61 |
x16 Fast Synchronous SRAM x16快速同步SRAM x18 Fast Synchronous SRAM 256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
HIROSE ELECTRIC Co., Ltd. ISSI[Integrated Silicon Solution, Inc]
|