| PART |
Description |
Maker |
| MCM64PC64S MCM64PC64SG66 MCM64PC32 MCM64PC32SG66 |
256K/512K Pipelined BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| MCM64PE32 MCM64PE32SDG66 |
256K/512K Pipelined BurstRAM Secondary Cache Module for Pentium
|
Motorola, Inc.
MOTOROLA INC
|
| MCM64PE64SDG66 MCM64PE32 MCM64PE32SDG66 |
256K/512K Pipelined BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MCM69P817 MCM69P817ZP2.5 MCM69P817ZP2.5R MCM69P817 |
256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| IS61VPD25636A-200TQ2I IS61VPD51218A-200B2I |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 256K X 36 CACHE SRAM, 3.1 ns, PQFP100
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 18 CACHE SRAM, 3.1 ns, PBGA119
|
Integrated Silicon Solution, Inc.
|
| IDT71V67802150BQI IDT71V67802150BG IDT71V67602150P |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36，为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线，单周期取
256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect
|
Integrated Device Technology, Inc.
|
| CY7C1354DV25-200BZI |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture 256K X 36 ZBT SRAM, 3.2 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| GVT71256C36 |
(GVT7xxxx) 256K X 36/512K X 18 Pipelined SRAM
|
Cypress Semiconductor
|
| GVT7C1360A GVT7C1362A |
(GVT7xxxx) 256K x 36 / 512K x 18 Pipelined SRAM
|
Cypress Semiconductor
|
