| PART |
Description |
Maker |
| SKY12228-12LF-EVB |
High IIP3, 0.7 to 1.0 GHz Variable Attenuator
|
Skyworks Solutions Inc.
|
| AD605-EB AD605ACHIPS AD605AR-REEL AD605AR-REEL7 AD |
Accurate, Low Noise, Dual Channel Linear-In-dB Variable Gain Amplifier, Optimized For Any Application Requiring High Performance
Dual, Low Noise, Single-Supply Variable Gain Amplifier
|
http://
Analog Devices, Inc.
ANALOG DEVICES INC
|
| MA4VAT2004-1061T MA4VAT2004-1061T-15 |
High IIP3 PIN Diode Variable Attenuator 1.7 - 2.0 GHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| BGU7004 |
SiGe:C Low Noise Amplifier MMIC
|
NXP Semiconductors
|
| NESG210833 NESG210833-T1B |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
Renesas Electronics Corporation
|
| NESG220033 NESG220033-T1B |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
Renesas Electronics Corporation
|
| BGU700510 |
SiGe:C Low Noise Amplifier MMIC for GPS
|
NXP Semiconductors
|
| MSG43004 |
SiGe HBT type For low-noise RF amplifier
|
Panasonic Semiconductor
|
| MSG43001 |
SiGe HBT type For low-noise RF amplifier
|
Panasonic Semiconductor
|
| NESG220034 NESG220034-T1 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
Renesas Electronics Corporation
|
| NESG220034-A NESG220034-T1 NESG220034-T1-A NESG220 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
NEC
|
| MAX2644 MAX2644EXT-T MAX264403 |
2.4GHz SiGe, High IP3 Low-Noise Amplifier
2.4GHz SiGe / High IP3 Low-Noise Amplifier
|
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
