| PART |
Description |
Maker |
| MA4VAT907-1061T MA4VAT907-1061T-15 |
High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| MA4VAT2007-1061T MA4VAT2007-1061T-15 |
High IIP3 PIN Diode Variable Attenuator 1.7 - 2.0 GHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| BAR89-02L BAR89 |
Silicon PIN Diode
PIN Diodes - PIN-Diode for high isolation, low loss antenna switch designs
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| MV104ZL1 MV104RLRP MV104RLRA MV104RLRAG |
39.5 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 CASE 29-11, TO-226AA, 3 PIN
39.5 pF, 32 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-92 CASE 29-11, TO-226AA, 3 PIN
|
ON Semiconductor
|
| MADC-010736 |
Receiver, High IIP3
|
M/A-COM Technology Solu...
|
| MV1638 MV1628 |
33 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA DO-7, 2 PIN
15 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA DO-7, 2 PIN
|
ON Semiconductor
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| BXY42-T1 BXY42 BXY42-T BXY42-T1H |
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals)
Publications, Books
From old datasheet system
SILICON, PIN DIODE
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
|
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
|
