| PART |
Description |
Maker |
| MA4E2513L-1289W MA4E2513 MA4E2513-1289 MA4E2513L-1 |
SURMOUNT Low Barrier Tee ?301 Footprint Silicon Schottky Diodes
SURMOUNT Low Barrier Tee “0301” Footprint Silicon Schottky Diodes
|
MACOM[Tyco Electronics]
|
| MADP-017015-1314 MADP-017015-1314V6 |
SURMOUNT Diodes
|
M/A-COM Technology Solutions, Inc.
|
| MA4SPS422 MA4SPS42 MA4SPS420 |
SURMOUNT PIN Diodes
|
MACOM[Tyco Electronics]
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| DXTN07100BP5-13 DXTN07100BP5 |
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI?5
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI垄莽5
|
Diodes Incorporated
|
| BAW156 Q62702-A922 |
From old datasheet system
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode)
|
SIEMENS AG
Siemens Group
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SK12ADW01 SK12AAW01 |
Low & Medium Security Keylocks
|
Nihon Kaiheiki Industry Co. Ltd.
|
| 140G105XO-0000 140B105XO-0000 140-105XO-0000 140G1 |
Medium Low-Profile Junction Box
|
Glenair, Inc.
http://
|
| 2SB772L |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
UTC[Unisonic Technologies]
|
| 2SB776G-X-T60-K 2SB776L-X-T60-K 2SB776-X-T60-K 2SB |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
Unisonic Technologies
|
