| PART |
Description |
Maker |
| HMC478SC70 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4 GHz
|
Hittite Microwave Corporation
|
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| IXFN100N10S1 IXFN100N10S3 IXFN100N10S2 |
HiPerFET Power MOSFETs with Schottky Diodes 100 A, 100 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MTB33N10E |
TMOS POWER FET 33 AMPERES 100 VOLTS 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| MTD6P10E ON2515 MTD6P10E-T4 |
6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| NTD6600N NTD6600N-1 NTD6600N-1G NTD6600NT4 NTD6600 |
Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK
Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 12 A, 100 V, 0.146 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| NTD12N10-1G NTD12N10G |
Power MOSFET 12 Amps, 100 Volts; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 12 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| SCA-3-11 |
Power Splitter/Combiner 3 Way-0° 50?/a> 100 to 940 MHz
From old datasheet system
Power Splitter/Combiner 3 Way-0∑ 50з 100 to 940 MHz
Power Splitter/Combiner 3 Way-0 50 100 to 940 MHz
Power Splitter/Combiner 3 Way-050з 100 to 940 MHz
|
MINI[Mini-Circuits]
|
| MBR20H100CT |
SWITCHMODE Power Rectifier 100 V, 20 A(100V,20A开关模式功率整流器) 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
| 2SA1666YI-UL 2SA1666YI-TR 2SC4903YL-UL 2SA1666YI-0 |
200 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Si, NPN, RF SMALL SIGNAL TRANSISTOR
100 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 30 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
UHF BAND, Si, RF SMALL SIGNAL, FET
3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
1 A, 60 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.3 A, 100 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92
2 A, 20 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
5 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
LEDtronics, Inc.
Integrated Device Technology, Inc.
Vishay Beyschlag
Air Cost Control
Mini-Circuits
Moeller Electric, Corp.
OSRAM GmbH
Cooper Hand Tools
KOA Speer Electronics,Inc.
ProMOS Technologies, Inc.
|
| SFF120-28Q |
9.2 AMPS 100 VOLTS 0.35S QUAD N-CHANNEL POWER MOSFET 9.2 A, 100 V, 0.35 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Solid State Devices, Inc.
|
|
