| PART |
Description |
Maker |
| EDI88130LPSNI EDI88130CS EDI88130CSLM EDI88130CSL3 |
25ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
45ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
17ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
128Kx8 Monolithic SRAM, SMD 5962-89598 128Kx8单片的SRAM，贴962-89598
128Kx8 Monolithic SRAM/ SMD 5962-89598
15ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
20ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
35ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
55ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
|
White Electronic Designs
ETC
Electronic Theatre Controls, Inc.
|
| MH64S72QJA-6 |
4,831,838,208-BIT ( 64,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH64S72VJG-6 MH64S72VJG-5 |
4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH64D72KLH-10 MH64D72KLH-75 |
4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Semiconductor
|
| MH64D72KLH-10 MH64D72KLH-75 |
4 /831 /838 /208-BIT (67 /108 /864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi
|
| MH64D72KLH-10 MH64D72KLH-75 |
4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Corporation
|
| MH64D72KLG-75 MH64D72KLG-10 |
4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Semiconductor
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| HY62U8200B HY62U8200B-E HY62U8200B-I A0A17 |
Low Power Slow SRAM - 2Mb
256Kx8bit CMOS SRAM
256K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| UT62L12816 UT62L12816BS-55LI UT62L12816BS-55LLI UT |
128K x 16 BIT LOW POWER CMOS SRAM 128K的16位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| HY62V8200B HY62V8200BLLR1 HY62V8200BLLR1-E HY62V82 |
Low Power Slow SRAM - 2Mb
HY62V8200B Series 256Kx8bit CMOS SRAM
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
http://
|
