| PART |
Description |
Maker |
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
| M36LLR8760 M36L0R7050 M36L0R7050B0ZAQE M36L0R7050B |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package 128兆位（多银行，多层次，突发）闪存32兆位00万16）移动存储芯片，1.8V电源多芯片封
CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014
ER 23C 16 12 8 4 SKT RECP WALL
CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014
128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM
From old datasheet system
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MICRF213 MICRF213AYQS |
1.8 V dual UART, 20 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA), and XScale VLIO bus interface, SOT912-1 (TFBGA36), Tray Pack, Bakeable, Multiple SPECIALTY CONSUMER CIRCUIT, PDSO16
1.8 V single UART, 20 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA), and XScale VLIO bus interface, SOT617-1 (HVQFN32), Tray Pack, Bakeable, Multiple 3.3，QwikRadio系列15MHz的接收器
|
Micrel Semiconductor,Inc.
Micrel Semiconductor, Inc.
|
| M58WR128EB80ZB6T M58WR128E-ZBT M58WR128ETZB M58WR1 |
Connector 连接
128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M30LW128D M30LW128D110N1T M30LW128D110N6T M30LW128 |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
ST Microelectronics
意法半导
|
| M30LW128D110N1T M30LW128D110ZA1T M30LW128D110N6T M |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29DW128F M29DW128F70NF1 M29DW128F70NF1E M29DW128F |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
|
Numonyx B.V
|
| M29DW128F M29DW128F60NF1 M29DW128F60NF1E M29DW128F |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory 128兆位16Mb的x8或和8Mb x16插槽，多行，页，引导块）3V电源，快闪记忆体
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory 128兆位6Mb的x8或和8Mb x16插槽，多行，页，引导块）3V电源，快闪记忆体
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| N25Q128A11BF840E N25Q128A21BF840E N25Q128A31BF840E |
128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface
128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
http://
Micron Technology
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
