| PART |
Description |
Maker |
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| LN162S |
GaAs Infrared Light Emitting Diode
|
Panasonic Semiconductor
|
| LN66F |
GaAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| LN151L LN151 LN151F |
GaAs Infrared Light Emitting Diodes
|
PANASONIC[Panasonic Semiconductor]
|
| Q67220-C1268 F0094U F0094V |
GaAs Infrared Light Emitting Diode (950 nm, 12 mil)
|
OSRAM GmbH
|
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| 4N40 4N39 |
Photo Coupled Isolator GaAs Infrared Emitting Diode & Light Activated SCR(正向峰值电00V的光耦合/隔离器（由GaAs红外发光二极光活性硅控整流器组成
|
Isocom Components
|
| TLN217 |
Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus
|
Toshiba Corporation
Toshiba Semiconductor
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
