| PART |
Description |
Maker |
| LBSS138WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| 2N700007 2N7000RLRPG 2N7000 2N7000G 2N7000RLRA 2N7 |
Small Signal MOSFET 200 mAmps, 60 Volts N?Channel TO?92 200 mAMPS 60 VOLTS
Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS
|
ONSEMI[ON Semiconductor]
|
| LBSS138LT1G LBSS138LT1 |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
LRC[Leshan Radio Company]
|
| LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
| BSV52LT1 BSV52L BSV52LT1-D BSV52LT1/D |
Switching Transistor (NPN Silicon)
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
|
ON Semiconductor
|
| VN2406L VN2406LZL1 |
Small Signal MOSFET 200 mAmps, 240 Volts
|
ON Semiconductor
|
| VN2406L-D |
Small Signal MOSFET 200 mAmps, 240 Volts N-Channel TO-92
|
ON Semiconductor
|
| BS107A BS107ARLRP BS107ARLRM BS107ARL1 BS107 BS107 |
Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92
From old datasheet system
Fast Recovery Glass Passivated Rectifier Diodes
|
ONSEMI[ON Semiconductor]
|
| 2N7002TL-AN3-R 2N7002TG-AN3-R |
300 mAmps, 60 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
Leshan Radio Company
|
| NTES1N02 |
Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管)
|
ON Semiconductor
|
| IXFT74N20 IXFR90N20 IXFE24N100 |
HIPERFET POWER MOSFETs 74 A, 200 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET ISOPLUS247, 3 PIN
Single MOSFET Die 22 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
