| PART |
Description |
Maker |
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
| TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN110 |
INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| L643706 L6437-01 |
Infrared LED High radiant output GaAs LED with position reference hole
|
Hamamatsu Corporation
|
| SPI-238-18 |
DDC50SF0 超小型光电断路器（单晶体管型
GaAs Infrared LED Ultraminiature photointerrupter (single-transistor type)
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| Q62703-Q1031 LD274 Q62703-Q1820 LD274-2 LD274-3 Q6 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TSUS4300 |
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
GaAs Infrared Emitting Diode in 庐3 mm (T-1) Package
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
From old datasheet system
|
VISAY[Vishay Siliconix]
|
| TSUS520 |
GaAs Infrared Emitting Diodes in ?5 mm (T-13/4)Package
GaAs Infrared Emitting Diodes in 庐5 mm (T-13/4)Package
GaAs Infrared Emitting Diodes in ?5 mm (T-13/4)Package
From old datasheet system
|
Vishay Siliconix
|
| MIE-514A4 514A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
