| PART |
Description |
Maker |
| KSK117 |
Tools, Drill Bits
N-CHANNEL JUNCTION FET (LOW FREQUENCY LOW NOISE AMP.)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| IDT72T51236L5BB IDT72T51236L5BBI IDT72T51256L6BBI |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
IDT[Integrated Device Technology]
|
| TPC8403 |
Field Effect Transistor Silicon P, N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) Motor Drive Notebook PC Portable Machines and Tools
|
TOSHIBA
|
| D00230 |
Right Angle Drill Attachment
|
List of Unclassifed Man...
|
| 60W010-C06 60W010-C06/50 60W010-C06/51 60S115-C06N |
CABLE STRIPPER FOR PORTABLE ELECTRIC DRILL
|
Rosenberger Hochfrequen...
|
| 180-2926 |
Solder terminal, Slotted, .064 (1,61) mounting hole (#52 drill)
|
CAMBION Electronic Components
|
| IS42S16400B1-7T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution Inc
|
| EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits DDR400)
|
Elpida Memory
|
| IS42S32200C1-6BL IS42S32200C1-6T IS42S32200C1-6TI |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42S16400B1 IS42S16400B1-7T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| EDS2532EEBH-9A EDS2532EEBH-9A-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
|
Elpida Memory, Inc.
|
| IS45S16400E |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution
|
