| PART |
Description |
Maker |
| KS0312A0 |
Base Drive Transistor Module (5 Amperes/1200 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
| EXB359 |
FUJI BASE DRIVE MODULE
|
FUJI[Fuji Electric]
|
| MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| 2SD2248 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive
|
TOSHIBA
|
| EPE6125GD |
Low Profile 10 Base-T Interface Module
DATACOM TRANSFORMER FOR 10 BASE-T APPLICATION(S)
|
PCA ELECTRONICS INC.
|
| EPG4001S EPG4001S-RC EPG4001S-15 |
11000Base-T Module
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S) ROHS COMPLIANT
|
PCA ELECTRONICS INC.
N.A.
ETC[ETC]
List of Unclassifed Manufacturers
Samsung Semiconductor Co., Ltd.
|
| AN509 |
INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR
|
SGS Thomson Microelectronics
|
| 2SB908 E000656 |
TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SD1140 |
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
|
TOSHIBA
|
| 2SJ304 |
Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSIV) DC .DC Converter, Relay Drive and Motor Drive Applications
|
TOSHIBA
|
| 2SK2967 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive Applications
|
TOSHIBA
|
