| PART |
Description |
Maker |
| KMM366S163BT-GL KMM366S1623BT KMM366S163BT-GB KMM3 |
PC100 SDRAM module. 100 MHz, 10 ns speed
DIODE, ZENER, 6.8V, 5%, 1/2W, MLL34&
DIODE ZENER 6.2V 0.5W 5% IZT=20MA DO-2
PC100 SDRAM module. 125 MHz, 8 ns speed
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HB52R649E1U-B6B HB52R649E1U-A6B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
|
Elpida Memory
|
| KVR100X64C3/256 |
100 Mhz SDRAM 168-pin PC100 Memory Module
|
Kingston Technology
|
| KVR100X64C2/64 |
100 Mhz SDRAM 168-pin PC100 DIMM Memory Module
|
Kingston Technology
|
| KVR100X64C2/256 |
100 Mhz SDRAM 168-pin PC100 DIMM Memory Module
|
Kingston Technology
|
| HB52RD648DC-B HB52RF648DC-B |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
|
Elpida Memory
|
| KMM366S1623CTY-GL KMM366S1623CTY KMM366S1623CTY-GH |
PC100 SDRAM MODULE
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| PC100 KMM366S1623CT-G8 KMM366S1623CT-GH KMM366S162 |
PC100 SDRAM MODULE Preliminary 初步PC100的内存模
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| V437216C04VDTG-10PC |
3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 REGISTER PLL ECC SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
| V436532S04VATG-10PC |
ER 10C 10#16 PIN RECP
3.3 VOLT 32M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
Mosel Vitelic Corp
|
| V43648Z04VTG |
3.3 Volt 8M x 64 High Performance 100 MHZ SDRAM Module with Unbuffered(3.3V 8M*64位高性能无缓冲器100MHZ的SDRAM模块) 3.300万64高性能100 MHz的内存模块，缓冲.3 64位高性能无缓冲器100MHZ输出的内存模块）
|
Mosel Vitelic, Corp.
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
