| PART |
Description |
Maker |
| 1SV257 |
RF Varactor Diodes
Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管（用于UHF波段无线电台
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation
Toshiba Semiconductor
|
| MA4X796 |
Silicon epitaxial planar type SILICON, VHF BAND, MIXER DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2S377 |
Silicon epitaxial planar type UHF BAND, 3.1 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| MA2Z784 |
Silicon epitaxial planar type 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
Panasonic Semiconductor
|
| SSM5H14F |
Silicon N Channel MOS Type (U-MOS?/Silicon Epitaxial Schottky Barrier Diode
Silicon N Channel MOS Type (U-MOS楼虏)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| KDS120V |
SILICON EPITAXIAL TYPE DIODE
|
KEC(Korea Electronics)
|
| MA6X126 |
KPTC 19C 19#20 SKT PLUG 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE
Silicon epitaxial planar type
|
Panasonic, Corp.
Panasonic Semiconductor
|
| KDV175E |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
| KDV143EL |
Silicon Epitaxial PIN Type Diode.
|
Korea Electronics (KEC)
|
| KDV142EL07 |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
