| PART |
Description |
Maker |
| K7J641882M |
(K7J641882M / K7J643682M) 72Mb M-die DDRII SRAM Specification
|
Samsung semiconductor
|
| K7I643682M-FC30 K7I641882M K7I641882M-EI16 K7I6418 |
72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
DDR SRAM, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor
Maxim Integrated Products, Inc.
|
| GS8642ZV36B-300I GS8642ZV36GB-200I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 5.5 ns, PBGA119
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS8640ZV18T-167I GS8640ZV36GT-167I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 8 ns, PQFP100
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
| GS8644Z36E-166V GS8644Z18E-225V GS8644Z36E-225V |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 7 ns, PBGA165
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PBGA165
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| K7I321884C K7I323684C |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| K7I323682C K7I321882C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K1636T2C K7K1618T2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| GS8662R08E-333 GS8662R08E-333I GS8662R08E-300 GS86 |
72Mb SigmaCIO DDR-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| UPD44324082F5-E40-EQ2 UPD44324082F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
