| PART |
Description |
Maker |
| K4D623238B-GC K4D623238B-GC_L33 K4D623238B-GC_L40 |
64Mbit DDR SDRAM 64Mb的DDR SDRAM内存
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S641632E-TC1H K4S641632E-TC1L K4S641632E-TC50 K4 |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
64Mbit SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TIP-N-RING |
Multilayer Ceramic Chip Capacitors, Ideal for Telephone Line (Tip `N Ring) Filtering, Replaces High Voltage, Leaded, Film Capacitors, Rated for Telecommunications Voltages, Low ESR, Wide Ban
|
Vishay
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY57V641620LTP HY57V641620STP |
Synchronous DRAM Memory 64Mbit
|
Hynix
|
| M74DW66500B |
2x 64Mbit Flash Memory and 32Mbit Pseudo SRAM
|
ST Microelectronics
|
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| SC73P1601 |
4BIT MCU
|
Silan Microelectronics
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| K4F160411C-B K4F170411C K4F170411C-B K4F170411C-F |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
|
Samsung Electronic
Samsung semiconductor
|
