| PART |
Description |
Maker |
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4H561638F-UC K4H561638F-UC_LB3 K4H560838F-UC_LA2 |
256Mb F-die DDR SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4H561638H-UI_PCC K4H561638H-UI_PB3 K4H561638H-UI_ |
256Mb H-die DDR SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| K4H560838H |
(K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H560838E-GLB3 K4H560438E-GC K4H560438E-GC_LA2 K4 |
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
SAMSUNG[Samsung semiconductor]
|
| K4H560838E-NLB3 K4H560438E-NC K4H560438E-NC_LA2 K4 |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
SAMSUNG[Samsung semiconductor]
|
| HYS64D3202 HYS64D16000GDL-6-C HYS64D32020HDL-6-C H |
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank; Available 2Q04
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank; Available 2Q04
DDR SDRAM Modules - 256MB (32Mx64) PC2700 2-bank; Available 2Q04
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| K4H560838E-VC/LB3 K4H560438E-VC/LB3 K4H560438E-VC/ |
256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片DDR SDRAM内存规格54 sTSOP与铅二无（符合RoHS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 32x8 SDRAM
184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| NT512D72S4PA0GR-75B NT512D72S4PA0GR-7K NT512D72S4P |
256Mb: 64Mx72; unbuffered DDR SDRAM module based on 64Mx4 DDR SDRAM
|
NANYA
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| HYMD232646A8J-D4 HYMD232646A8J-D43 HYMD232646A8J-J |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
