| PART |
Description |
Maker |
| VDL1884 |
L-Band TR Limiter Attenuator
|
Communications & Power Industries, Inc.
|
| 1SV312 |
DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS)
|
Toshiba Semiconductor
|
| KATC-0814 |
From old datasheet system
Wide Band PIN Diode Attenuator
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| TG2202F |
1.9GHz BAND ATTENUATOR (PHS DIGITAL CORDLESS TELEPHONE)
|
TOSHIBA[Toshiba Semiconductor]
|
| BENCHVUE |
BenchVue Power Analyzer App
|
Keysight Technologies
|
| 1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications
|
TOSHIBA
|
| AN1102 |
ST10 DIRECT MEMORY ACCESS USING MAC - APP NOTE - REV A - 5/11/98
|
SGS Thomson Microelectronics
|
| MA03503D |
X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die
|
MACOM
|
| 3-28-109 3-05-109 3-10-109 3-08-109 3-04-109 3-03- |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Fixed Attenuators 18325 GHz 固定衰减18325千兆
33000 MHz - 50000 MHz RF/MICROWAVE FIXED ATTENUATOR
40000 MHz - 60000 MHz RF/MICROWAVE FIXED ATTENUATOR
18000 MHz - 26500 MHz RF/MICROWAVE FIXED ATTENUATOR
220000 MHz - 325000 MHz RF/MICROWAVE FIXED ATTENUATOR
|
TE Connectivity, Ltd.
|
| S3P72H8 S3C72H8 |
The S3C72H8 single-chip CMOS microcontroller has been designed for very high performance using Samsungs state-of-the-art 4-bit product development app
|
SAMSUNG[Samsung semiconductor]
|
