| PART |
Description |
Maker |
| IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol
HiPerFETTM Power MOSFETs
MOSFET with FAST Intrinsic Diode
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| IXFF24N100 IXYSCORP-IXFF24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM
|
IXYS Corporation
|
| IXFK24N10007 IXFX24N100 IXFK24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs
|
IXYS Corporation
|
| IXFR24N100 |
HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IXFH80N20Q IXFK80N20Q IXFT80N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
| IXFH11N80 IXFH13N80 IXFM13N80 IXFM11N80 |
HiPerFET Power MOSFETs 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| S3P72K8 S3C72K8 |
singl-chip CMOS microcontroller
|
SAMSUNG[Samsung semiconductor]
|
| IXFR180N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| BL8581A |
PWM or Singl-Wire Dimming, 4-Channels WLED Linear Driver
|
SHANGHAI BELLING CO., LTD.
|
| IXFE44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
