| PART |
Description |
Maker |
| IRL640A |
Power MOSFET - BVdss=200V Rds(on)=0.18 ohn Id = 18A
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFL024NPBF IRFL024NPBF-15 |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFI1010NPBF IRFI1010NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFL4105PBF IRFL4105TRPBF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
Vishay Siliconix
International Rectifier
|
| IRLM220A IRLM220ATF |
200V N-Channel A-FET
Advanced Power MOSFET
HEXFET Power MOSFET
|
Fairchild Semiconductor
International Rectifier
|
| IRLM210 IRLM210A IRLM210ATF |
200V N-Channel Logic Level A-FET
N-CHANNEL MOSFET
Advanced Power MOSFET
HEXFET Power MOSFET
|
Fairchild Semiconductor
International Rectifier
|
| IRFRU220A IRFR_U220A IRFR220A IRFU220A IRFR/U220A |
4.6 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
ADVANCED POWER MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRLI3705NPBF IRLI3705NPBF-15 |
HEXFET?Power MOSFET
HEXFET㈢Power MOSFET
ADVANCED PROCESS TECHNOLOGY
|
International Rectifier
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRFS840A |
N-Channel Power MOSFET00V.85Ω.6AN沟道功率MOS场效应管（漏源电00V，导通电.85Ω，漏电流4.6A 4.6 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRLWI520A IRFI740A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
